生命周期: | Active | 零件包装代码: | SOIC |
包装说明: | SMALL OUTLINE, R-PSSO-G4 | 针数: | 4 |
Reach Compliance Code: | compliant | 风险等级: | 0.98 |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 25.3 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 19 A |
最大漏源导通电阻: | 0.065 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | MO-235 | JESD-30 代码: | R-PSSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 76 A |
参考标准: | AEC-Q101; IEC-60134 | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK7Y6R0-60E | NXP |
获取价格 |
N-channel 60 V, 6.0 mΩ standard level MOSFET |
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BUK7Y6R0-60E | NEXPERIA |
获取价格 |
N-channel 60 V, 6.0 mΩ standard level MOSFET |
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BUK7Y72-80E | NXP |
获取价格 |
N-channel 80 V, 72 mΩ standard level MOSFET |
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BUK7Y72-80E | NEXPERIA |
获取价格 |
N-channel 80 V, 72 mΩ standard level MOSFET i |
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BUK7Y7R0-40H | NEXPERIA |
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N-channel 40 V, 7.0 mΩ standard level MOSFET |
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BUK7Y7R2-60E | NEXPERIA |
获取价格 |
N-channel 60 V, 7.2 mΩ standard level MOSFET |
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BUK7Y7R6-40E | NXP |
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N-channel 40 V, 7.6 mΩ standard level MOSFET |
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BUK7Y7R6-40E | NEXPERIA |
获取价格 |
N-channel 40 V, 7.6 mΩ standard level MOSFET |
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BUK7Y7R6-40EX | ETC |
获取价格 |
MOSFET N-CH 40V 79A LFPAK |
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BUK7Y7R8-80E | NEXPERIA |
获取价格 |
N-channel 80 V, 7.8 mΩ standard level MOSFET |
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