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BUK7Y53-100B PDF预览

BUK7Y53-100B

更新时间: 2023-09-03 20:31:57
品牌 Logo 应用领域
安世 - NEXPERIA 开关脉冲晶体管
页数 文件大小 规格书
14页 1009K
描述
N-channel TrenchMOS standard level FETProduction

BUK7Y53-100B 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G4Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.74
雪崩能效等级(Eas):81 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):24.8 A最大漏源导通电阻:0.053 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):99 A表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUK7Y53-100B 数据手册

 浏览型号BUK7Y53-100B的Datasheet PDF文件第2页浏览型号BUK7Y53-100B的Datasheet PDF文件第3页浏览型号BUK7Y53-100B的Datasheet PDF文件第4页浏览型号BUK7Y53-100B的Datasheet PDF文件第5页浏览型号BUK7Y53-100B的Datasheet PDF文件第6页浏览型号BUK7Y53-100B的Datasheet PDF文件第7页 
BUK7Y53-100B  
N-channel TrenchMOS standard level FET  
Rev. 3 — 13 October 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic  
package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology.  
This product has been designed and qualified to the appropriate AEC standard for use  
in automotive critical applications.  
1.2 Features and benefits  
„ Q101 compliant  
„ Suitable for thermally demanding  
environments due to 175 °C rating  
„ Suitable for standard level gate drive  
sources  
1.3 Applications  
„ 12 V, 24 V and 42 V loads  
„ Automotive systems  
„ DC-to-DC converters  
„ Engine management  
„ General purpose power switching  
„ Solenoid drivers  
„ Transmission control  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
drain-source  
voltage  
Tj 25 °C; Tj 175 °C  
-
-
-
-
-
-
100  
24.8  
85  
V
ID  
drain current  
VGS = 10 V; Tmb = 25 °C;  
see Figure 1; see Figure 4  
A
Ptot  
total power  
dissipation  
Tmb = 25 °C; see Figure 2  
W
Static characteristics  
RDSon drain-source  
VGS = 10 V; ID = 10 A;  
Tj = 25 °C; see Figure 12;  
see Figure 13  
-
40  
53  
mΩ  
on-state  
resistance  

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