Datasheet > BUK7Y53-100B

BUK7Y53-100B

更新时间： 2024-01-22 10:02:45

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	217K
描述
N-channel TrenchMOS standard level FET

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BUK7Y53-100B 数据手册

BUK7Y53-100B

N-channel TrenchMOS standard level FET

Rev. 02 — 11 February 2010

Objective data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

product has been designed and qualified to the appropriate AEC standard for use in

automotive critical applications.

1.2 Features and benefits

Q101 compliant

Suitable for thermally demanding

environments due to 175 °C rating

Suitable for standard level gate drive

sources

1.3 Applications

12 V, 24 V and 42 V loads

Automotive systems

DC-to-DC converters

Engine management

General purpose power switching

Solenoid drivers

Transmission control

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 175 °C

Min

Typ

Max Unit

V_DS

I_D

100

drain current

V_GS= 10 V; T_mb= 25 °C;

see Figure 1 and 3

24.8

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

Dynamic characteristics

Q_GDgate-drain charge

I_D= 10 A; V_DS= 80 V;

V_GS= 10 V; see Figure 15

8.5

mΩ

Static characteristics

R_DSon

drain-source

on-state resistance

V_GS= 10 V; I_D= 10 A;

T_j= 25 °C;

see Figure 12 and 13

Avalanche ruggedness

E_DS(AL)Snon-repetitive

drain-source

I_D= 24.8 A; V_sup≤ 100 V;

R_GS= 50 Ω; V_GS= 10 V;

T_j(init)= 25 °C; unclamped

avalanche energy

12 3 4 5 6 7...13

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