Datasheet > BUK762R0-40C,118

BUK762R0-40C,118

更新时间： 2024-11-23 19:52:47

品牌	Logo	应用领域
恩智浦 - NXP		开关脉冲晶体管
页数	文件大小	规格书
15页	196K
描述
BUK762R0-40C - N-channel TrenchMOS standard level FET D2PAK 3-Pin

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BUK762R0-40C,118 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	D2PAK
针数：	3	Reach Compliance Code：	not_compliant
风险等级：	5.74	Base Number Matches：	1

BUK762R0-40C,118 数据手册

BUK762R0-40C

N-channel TrenchMOS standard level FET

Rev. 02 — 20 August 2007

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in

Automotive critical applications.

1.2 Features

175 °C rated

Q101 compliant

Low on-state resistance

Standard level compatible

1.3 Applications

12 V loads

Automotive systems

General purpose power switching

Motors, lamps, solenoids

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

Min Typ Max Unit

[1][2]

I_D

drain current

V_GS= 10 V; T_mb= 25 °C;

100

see Figure 1 and 4

P_tot

total power dissipation T_mb= 25 °C; see Figure 2

333

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A;

T_j= 25 °C; see Figure 13 and

1.7

mΩ

Avalanche ruggedness

E_DS(AL)Snon-repetitive

I_D= 100 A; V_sup≤ 40 V;

1.2

drain-sourceavalanche R_GS= 50 Ω; V_GS= 10 V;

energy

T_j(init)= 25 °C; inductive load

type unclamped inductive load

[1] Continuous current is limited by package.

[2] Refer to document 9397 750 12572 for further information.

12 3 4 5 6 7...15

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