Datasheet > BUK762R4-60E,118

BUK762R4-60E,118

更新时间： 2024-11-26 22:56:47

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描述
MOSFET N-CH 60V 120A D2PAK

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BUK762R4-60E,118 数据手册

BUK762R4-60E

N-channel TrenchMOS standard level FET

28 July 2016

Product data sheet

1. General description

Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high

performance automotive applications.

2. Features and benefits

AEC Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True standard level gate with V_GS(th)rating of greater than 1 V at 175 °C

•

3. Applications

12 V Automotive systems

•

Electric and electro-hydraulic power steering

Motors, lamps and solenoid control

Start-Stop micro-hybrid applications

Transmission control

Ultra high performance power switching

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

[1]

120

349

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 11

1.9

2.4

mΩ

I_D= 25 A; V_DS= 48 V; V_GS= 10 V;

Fig. 13; Fig. 14

45.5

[1] Continuous current is limited by package.

12 3 4 5 6 7...13

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