Datasheet > BUK761R8-30C,118

BUK761R8-30C,118

更新时间： 2024-11-23 21:08:31

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	205K
描述
N-channel TrenchMOS standard level FET D2PAK 3-Pin

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技术参数
数据手册

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BUK761R8-30C,118 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	D2PAK
针数：	3	Reach Compliance Code：	not_compliant
风险等级：	5.73	Base Number Matches：	1

BUK761R8-30C,118 数据手册

BUK761R8-30C

N-channel TrenchMOS standard level FET

Rev. 02 — 20 August 2007

Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package,

using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology.

1.2 Features

175 °C rated

Standard level compatible

Q101 compliant

TrenchMOS technology

1.3 Applications

12 V loads

Automotive systems

General purpose power switching

Motors, lamps and solenoids

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

Min Typ Max Unit

[1][2]

I_D

drain current

V_GS= 10 V; T_mb= 25 °C;

100

see Figure 1 and 4

P_tot

total power dissipation T_mb= 25 °C; see Figure 2

333

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A;

T_j= 25 °C; see Figure 12 and

1.5

1.8

1.7

mΩ

Avalanche ruggedness

E_DS(AL)Snon-repetitive

I_D= 100 A; V_sup≤ 30 V;

drain-sourceavalanche R_GS= 50 Ω; V_GS= 10 V;

energy T_j(init)= 25 °C

[1] Refer to document 9397 750 12572 for further information.

[2] Continuous current is limited by package.

12 3 4 5 6 7...15

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