BUJ301AX

更新时间： 2024-02-26 02:47:03

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管功率双极晶体管开关局域网
页数	文件大小	规格书
4页	25K
描述
Silicon Diffused Power Transistor

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BUJ301AX 技术参数

Philips Semiconductors

Objective specification

Silicon Diffused Power Transistor

BUJ301AX

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

August 1998

Rev 1.000

1 2 34

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型号	品牌	描述	获取价格	数据表
BUJ302	NXP	Silicon Diffused Power Transistor	获取价格
BUJ302A	NXP	Silicon Diffused Power Transistor	获取价格
BUJ302A	WEEN	High voltage, high speed planar passivated NPN power switching transistor in a SOT78 (TO-2	获取价格
BUJ302A,127	NXP	BUJ302A	获取价格
BUJ302AD	NXP	NPN power transistor	获取价格
BUJ302AD	WEEN	High voltage, high speed planar passivated NPN power switching transistor in a SOT428 (DPA	获取价格