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BUJ303AX

更新时间: 2024-01-20 10:28:06
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
7页 77K
描述
Silicon Diffused Power Transistor

BUJ303AX 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.63
JESD-609代码:e3湿度敏感等级:1
峰值回流温度(摄氏度):240端子面层:TIN
处于峰值回流温度下的最长时间:30Base Number Matches:1

BUJ303AX 数据手册

 浏览型号BUJ303AX的Datasheet PDF文件第2页浏览型号BUJ303AX的Datasheet PDF文件第3页浏览型号BUJ303AX的Datasheet PDF文件第4页浏览型号BUJ303AX的Datasheet PDF文件第5页浏览型号BUJ303AX的Datasheet PDF文件第6页浏览型号BUJ303AX的Datasheet PDF文件第7页 
Philips Semiconductors  
Preliminary specification  
Silicon Diffused Power Transistor  
BUJ303AX  
GENERAL DESCRIPTION  
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended  
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor  
control systems, etc.  
QUICK REFERENCE DATA  
SYMBOL PARAMETER  
CONDITIONS  
TYP. MAX. UNIT  
VCESM  
VCBO  
VCEO  
IC  
Collector-emitter voltage peak value  
VBE = 0 V  
-
1000  
1000  
500  
5
V
V
V
A
A
W
V
Collector-Base voltage (open emitter)  
Collector-emitter voltage (open base)  
Collector current (DC)  
-
-
-
ICM  
Collector current peak value  
Total power dissipation  
-
10  
Ptot  
Ths 25 ˚C  
-
32  
VCEsat  
hFEsat  
tf  
Collector-emitter saturation voltage  
DC current gain  
IC = 3 A; IB = 0.6 A  
IC = 3 A; VCE = 5 V  
Ic=2.5A,IB1=0.5A  
0.25  
12  
145  
1.5  
-
Fall time  
160  
ns  
PINNING - SOT186A  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
c
case  
base  
2
collector  
emitter  
b
3
case isolated  
1
2 3  
e
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN. MAX. UNIT  
VCESM  
VCEO  
VCBO  
IC  
Collector to emitter voltage  
VBE = 0 V  
-
1000  
500  
1000  
5
V
V
Collector to emitter voltage (open base)  
Collector to base voltage (open emitter)  
Collector current (DC)  
-
-
V
-
A
ICM  
Collector current peak value  
Base current (DC)  
Base current peak value  
Total power dissipation  
Storage temperature  
Junction temperature  
-
10  
A
IB  
IBM  
Ptot  
Tstg  
Tj  
-
2
A
-
-
4
A
Ths 25 ˚C  
32  
W
˚C  
˚C  
-65  
-
150  
150  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP. MAX. UNIT  
Rth j-hs  
Rth j-a  
Junction to heatsink  
Junction to ambient  
with heatsink compound  
in free air  
-
3.95  
-
K/W  
K/W  
55  
August 1998  
1
Rev 1.000  

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