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BUJ303AD,118 PDF预览

BUJ303AD,118

更新时间: 2024-11-12 20:00:47
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
14页 173K
描述
BUJ303AD

BUJ303AD,118 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DPAK
针数:3Reach Compliance Code:not_compliant
风险等级:5.58Base Number Matches:1

BUJ303AD,118 数据手册

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BUJ303AD  
AK  
DP  
NPN power transistor  
Rev. 1 — 2 September 2011  
Product data sheet  
1. Product profile  
1.1 General description  
High voltage, high speed planar passivated NPN power switching transistor in a SOT428  
(DPAK) surface mountable plastic package.  
1.2 Features and benefits  
Fast switching  
Very high voltage capability  
Low thermal resistance  
Surface mountable package  
Very low switching and conduction  
losses  
1.3 Applications  
DC-to-DC converters  
Inverters  
High frequency electronic lighting  
Motor control systems  
ballasts  
1.4 Quick reference data  
Table 1.  
Symbol  
IC  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
collector current  
see Figure 1; see Figure 2;  
see Figure 4  
-
-
5
A
Ptot  
total power dissipation Tmb 25 °C; see Figure 3  
-
-
-
-
80  
W
VCESM  
collector-emitter peak VBE = 0 V  
voltage  
1000 V  
Static characteristics  
hFE DC current gain  
IC = 5 mA; VCE = 5 V;  
mb = 25 °C; see Figure 11  
10  
14  
22  
25  
30  
35  
T
IC = 500 mA; VCE = 5 V;  
Tmb = 25 °C; see Figure 11  
 
 
 
 
 

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