是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | TO-220AB | 包装说明: | PLASTIC, SC-46, 3 PIN |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.66 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 4 A | 集电极-发射极最大电压: | 400 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 25 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 50 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUJ302A,127 | NXP |
获取价格 |
BUJ302A | |
BUJ302AD | NXP |
获取价格 |
NPN power transistor | |
BUJ302AD | WEEN |
获取价格 |
High voltage, high speed planar passivated NPN power switching transistor in a SOT428 (DPA | |
BUJ302AD,118 | NXP |
获取价格 |
BUJ302AD | |
BUJ302AX | NXP |
获取价格 |
Silicon Diffused Power Transistor | |
BUJ302AX | PHILIPS |
获取价格 |
Transistor | |
BUJ302AX | WEEN |
获取价格 |
High voltage, high speed planar passivated NPN power switching transistor in a SOT186A (TO | |
BUJ302AX,127 | NXP |
获取价格 |
BUJ302AX | |
BUJ303A | NXP |
获取价格 |
Silicon Diffused Power Transistor | |
BUJ303A | WEEN |
获取价格 |
High voltage, high speed planar passivated NPN power switching transistor in a SOT78 (TO-2 |