5秒后页面跳转
BUJ302A PDF预览

BUJ302A

更新时间: 2024-11-28 22:17:35
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管开关局域网
页数 文件大小 规格书
4页 21K
描述
Silicon Diffused Power Transistor

BUJ302A 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-220AB包装说明:PLASTIC, SC-46, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.66外壳连接:COLLECTOR
最大集电极电流 (IC):4 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):25
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):50 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUJ302A 数据手册

 浏览型号BUJ302A的Datasheet PDF文件第2页浏览型号BUJ302A的Datasheet PDF文件第3页浏览型号BUJ302A的Datasheet PDF文件第4页 
Philips Semiconductors  
Objective specification  
Silicon Diffused Power Transistor  
BUJ302A  
GENERAL DESCRIPTION  
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use  
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control  
systems, etc.  
QUICK REFERENCE DATA  
SYMBOL PARAMETER  
CONDITIONS  
TYP. MAX. UNIT  
VCESM  
VCBO  
VCEO  
IC  
Collector-emitter voltage peak value  
VBE = 0 V  
-
1000  
1000  
500  
2
V
V
Collector-Base voltage (open emitter)  
Collector-emitter voltage (open base)  
Collector current (DC)  
-
-
V
-
A
A
ICM  
Collector current peak value  
Total power dissipation  
Collector-emitter saturation voltage  
Fall time  
-
3
Ptot  
VCEsat  
tf  
Tmb 25 ˚C  
-
-
50  
1.0  
160  
W
V
IC = 1.0 A;IB = 0.2 A  
Ic=1A,IB1=0.2A  
145  
ns  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
c
tab  
base  
2
collector  
emitter  
b
3
tab collector  
e
1 2 3  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN. MAX. UNIT  
VCESM  
VCEO  
VCBO  
IC  
Collector to emitter voltage  
VBE = 0 V  
-
1000  
500  
1000  
2
V
V
Collector to emitter voltage (open base)  
Collector to base voltage (open emitter)  
Collector current (DC)  
-
-
V
-
A
ICM  
Collector current peak value  
Base current (DC)  
-
3
A
IB  
IBM  
Ptot  
Tstg  
Tj  
-
0.75  
1
50  
150  
150  
A
Base current peak value  
Total power dissipation  
-
-
A
Tmb 25 ˚C  
W
˚C  
˚C  
Storage temperature  
-65  
-
Junction temperature  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP. MAX. UNIT  
Rth j-mb  
Rth j-a  
Junction to mounting base  
Junction to ambient  
-
2.5  
-
K/W  
K/W  
in free air  
70  
August 1998  
1
Rev 1.000  

与BUJ302A相关器件

型号 品牌 获取价格 描述 数据表
BUJ302A,127 NXP

获取价格

BUJ302A
BUJ302AD NXP

获取价格

NPN power transistor
BUJ302AD WEEN

获取价格

High voltage, high speed planar passivated NPN power switching transistor in a SOT428 (DPA
BUJ302AD,118 NXP

获取价格

BUJ302AD
BUJ302AX NXP

获取价格

Silicon Diffused Power Transistor
BUJ302AX PHILIPS

获取价格

Transistor
BUJ302AX WEEN

获取价格

High voltage, high speed planar passivated NPN power switching transistor in a SOT186A (TO
BUJ302AX,127 NXP

获取价格

BUJ302AX
BUJ303A NXP

获取价格

Silicon Diffused Power Transistor
BUJ303A WEEN

获取价格

High voltage, high speed planar passivated NPN power switching transistor in a SOT78 (TO-2