Datasheet > BTA1727J3-0-T3-G

BTA1727J3-0-T3-G

更新时间： 2024-11-06 01:21:19

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
7页	433K
描述
High Voltage PNP Epitaxial Planar Transistor

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数据手册

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BTA1727J3-0-T3-G 数据手册

Spec. No. : C236J3

Issued Date : 2018.05.29

Revised Date :

CYStech Electronics Corp.

Page No. : 1/7

High Voltage PNP Epitaxial Planar Transistor

BTA1727J3

Description

 High breakdown voltage. (BV_CEO=-400V)

 Low saturation voltage

 Wide SOA (safe operation area).

 Pb-free lead plating and halogen-free package

Symbol

Outline

TO-252(DPAK)

BTA1727J3

B：Base

B C E

C：Collector

E：Emitter

Ordering Information

Device

Package

TO-252

(RoHS compliant package)

Shipping

2500 pcs / Tape & Reel

BTA1727J3-0-T3-G

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, T3:2500 pcs/tape & reel, 13” reel

Product rank, zero for no rank products

Product name

BTP1727J3

CYStek Product Specification

12 3 4 5 6 7

中文翻译

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