Datasheet > BTA1952J3_09

BTA1952J3_09

更新时间： 2024-11-09 06:44:27

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
6页	232K
描述
Low Vcesat PNP Epitaxial Planar Transistor

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数据手册

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BTA1952J3_09 数据手册

Spec. No. : C601J3

Issued Date : 2004.05.17

Revised Date :2009.02.04

Page No. : 1/6

CYStech Electronics Corp.

Low Vcesat PNP Epitaxial Planar Transistor

BVCEO

RCESAT

-100V

-5A

150mΩ

BTA1952J3

Features

• Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A

• Excellent DC current gain characteristics

• Wide SOA

• Complementary to BTC5103J3

• RoHS compliant package

Symbol

Outline

BTA1952J3

TO-252

B：Base

C：Collector

E：Emitter

B C E

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VCBO

VCEO

VEBO

-100

-80

-5

IC(DC)

I^C(Pulse)

-5

-10

Collector Current

Pd(TA=25℃)

Pd(T^C=25℃)

150

-55~+150

Power Dissipation

Junction Temperature

Storage Temperature

°C

Tstg

Note : *1 Single Pulse Pw=10ms

BTA1952J3

CYStek Product Specification

12 3 4 5 6

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