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BTA2008W-600D PDF预览

BTA2008W-600D

更新时间: 2024-04-09 19:03:03
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
13页 760K
描述
Planar passivated high commutation three quadrant triac in a SOT223 surface mountable plastic package. This "series D" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including microcontrollers.

BTA2008W-600D 数据手册

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BTA2008W-600D  
3Q Hi-Com Triac  
Rev.02 - 09 March 2022  
Product data sheet  
1. General description  
Planar passivated high commutation three quadrant triac in a SOT223 surface mountable plastic  
package. This "series D" triac balances the requirements of commutation performance and  
gate sensitivity and is intended for interfacing with low power drivers and logic ICs including  
microcontrollers.  
2. Features and benefits  
3Q technology for improved noise immunity  
Direct gate triggering from low power drivers and logic ICs  
High commutation capability with very sensitive gate  
High voltage capability  
Planar passivated for voltage ruggedness and reliability  
Surface mountable package  
Triggering in three quadrants only  
Very sensitive gate for easy logic level triggering  
3. Applications  
Low power motor controls  
Small inductive loads e.g. solenoids, door locks, water valves  
Small loads in large white goods  
4. Quick reference data  
Table 1. Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Absolute maximum rating  
VDRM  
IT(RMS)  
ITSM  
repetitive peak off-state  
voltage  
-
-
-
-
-
-
600  
0.8  
9
V
A
A
RMS on-state current  
full sine wave; T ≤ 111 °C;  
Fig. 1; Fig. 2; Fig. 3  
sp  
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;  
state current  
Fig. 4; Fig. 5  
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms  
-
-
-
-
9.9  
A
Tj  
junction temperature  
125  
°C  
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 9  
0.25  
0.25  
0.25  
-
-
-
5
5
5
mA  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 9  
VD = 12 V; IT = 0.1 A; T2- G-;  
Tj = 25 °C; Fig. 9  

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