Datasheet > BTA1759M3

BTA1759M3

更新时间： 2024-09-24 04:09:31

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
4页	154K
描述
High Voltage PNP Epitaxial Planar Transistor

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数据手册

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BTA1759M3 数据手册

Spec. No. : C309M3

Issued Date : 2003.06.30

Revised Date :

CYStech Electronics Corp.

Page No. : 1/4

High Voltage PNP Epitaxial Planar Transistor

BTA1759M3

Description

• High breakdown voltage. (BV_CEO=-400V)

• Low saturation voltage, typically V_CE(sat)= -0.07V at Ic/I_B=-10mA/-1mA.

• Wide SOA (safe operation area).

• Complementary to BTC4505M3.

Symbol

Outline

BTA1759M3

SOT-89

B：Base

C：Collector

E：Emitter

B C E

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

-400

-6

-300

0.6

Power Dissipation

(Note 1)

(Note 2)

208

°C/W

°C

Thermal Resistance, Junction to Ambient

R^θJA

125 (Note 1)

62.5 (Note 2)

150

Junction Temperature

Storage Temperature

Tstg

-55~+150

°C

Note : 1.When mounted on FR-4 PCB with area measuring 10×10×1 mm

2.When mounted on ceramic with area measuring 40×40×1 mm

BTA1759M3

CYStek Product Specification

12 3 4

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