Datasheet > BSC010N04LSI

BSC010N04LSI

更新时间： 2024-09-25 12:50:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
2页	1021K
描述
New OptiMOSâ¢ 40V and 60V

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中文翻译

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技术参数
数据手册

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BSC010N04LSI 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	GREEN, PLASTIC, TDSON-8, 8 PIN
针数：	8	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
风险等级：	5.61	JESD-609代码：	e3
湿度敏感等级：	1	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Tin (Sn)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

BSC010N04LSI 数据手册

Product Brief

Features

Optimized for Synchronous

Rectiﬁcation

New OptiMOS™ 40V and 60V

Shrink Your Design and Boost Eﬃciency

35% lower R_DS(on)than

alternative devices

45% improvement of FOM

over similar devices

New OptiMOS™ 40V and 60V, Inﬁneon’s latest generation of power MOSFETs,

is optimized for Synchronous Rectiﬁcation in switched mode power supplies

(SMPS) such as those found in servers and desktops. In addition these devices

are a perfect choice for a broad range of industrial applications including motor

control, solar micro inverter and fast switching DC/DC converter.

Integrated Schottky-like diode

RoHS compliant - halogen free

MSL1 rated

Beneﬁts

Highest system eﬃciency

New 40V and 60V product families, feature not only the industry’s lowest R_DS(on)

but also a perfect switching behavior for fast switching applications. 35%

lower R_DS(on)and 45% lower Figure of Merit (R_DS(on)x Q_g)compared to alternative

devices has been realized by advanced thin wafer technology.

Less paralleling required

Increased power density

System cost reduction

Very low voltage overshoot

The fast growing market of solar micro inverter requires ever higher

performance levels of components. In typical photovoltaic topologies both

R_DS(on)and switching characteristics are equally important. In a micro inverter

1.5% higher eﬃciency can be achieved at a 20% load condition by using

BSC016N06NS (1.6mΩ SuperSO8 (5mmx6mm) 60V device).

Applications

Synchronous Rectiﬁcation

Solar micro inverter

Isolated DC/DC converters

Motor control for 12-48V systems

Or-ing switches

40V SuperSO8

60V SuperSO8

Existing OptiMOS™ 40V

New Generation 40V

Existing OptiMOS™ 60V

New Generation 60V

-41%

-48%

40V

60V

www.inﬁneon.com/newoptimos

中文翻译

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与BSC010N04LSI相关器件

型号	品牌	获取价格	描述	数据表
BSC010N04LSIATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 37A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Me
BSC010NE2LS	INFINEON	获取价格	n-Channel Power MOSFET
BSC010NE2LSATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 40A I(D), 25V, 0.0013ohm, 1-Element, N-Channel, Silicon, Me
BSC010NE2LSI	INFINEON	获取价格	n-Channel Power MOSFET
BSC010NE2LSIATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 38A I(D), 25V, 0.0014ohm, 1-Element, N-Channel, Silicon, Me
BSC011N03LS	INFINEON	获取价格	n-Channel Power MOSFET
BSC011N03LSATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 37A I(D), 30V, 0.0014ohm, 1-Element, N-Channel, Silicon, Me
BSC011N03LSI	INFINEON	获取价格	n-Channel Power MOSFET
BSC012N06NS	INFINEON	获取价格	Infineon's?OptiMOS? MOSFETs in SuperSO8 package extend OptiMOS? 3 and 5 product portfolio
BSC014N03LSG	INFINEON	获取价格	OptiMOS™3 Power-MOSFET

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