Very Low Power/Voltage CMOS SRAM
256K X 16 bit
BSI
BS616LV4010
DESCRIPTION
FEATURES
The BS616LV4010 is a high performance, very low power CMOS Static
Random Access Memory organized as 262,144 words by 16 bits and
operates from a wide range of 2.7V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.5uA and maximum access time of 70/100ns in 3V operation.
Easy memory expansion is provided by an active LOW chip
enable(CE) and active LOW output enable(OE) and three-state output
drivers.
• Very low operation voltage : 2.7 ~ 3.6V
• Very low power consumption :
Vcc = 3.0V
C-grade: 20mA (Max.) operating current
I -grade: 25mA (Max.) operating current
0.5uA (Typ.) CMOS standby current
• High speed access time :
-70
-10
70ns (Max.) at Vcc = 3.0V
100ns (Max.) at Vcc = 3.0V
•Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
The BS616LV4010 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV4010 is available in DICE form, JEDEC standard 44-pin
TSOP Type II package and 48-pin BGA package.
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
PRODUCT FAMILY
POWER DISSIPATION
SPEED
( ns )
(SICTCASBN1,DMBaxY)
Operating
PRODUCT
FAMILY
OPERATING
Vcc
( ICC, Max )
PKG TYPE
TEMPERATURE
RANGE
Vcc=3.0V
Vcc=3.0V
Vcc=3.0V
20mA
BS616LV4010DC
BS616LV4010EC
BS616LV4010AC
BS616LV4010BC
BS616LV4010DI
BS616LV4010EI
BS616LV4010AI
BS616LV4010BI
DICE
TSOP2-44
BGA-48-0608
BGA-48-0810
DICE
+0 O C to +70O
-40 O C to +85O
C
C
2.7V ~ 3.6V
2.7V ~ 3.6V
70 / 100
8uA
TSOP2-44
BGA-48-0608
BGA-48-0810
70 / 100
12uA
25mA
PIN CONFIGURATIONS
BLOCK DIAGRAM
1
2
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A4
A3
A5
A6
3
A2
A7
4
A1
OE
5
A0
UB
6
CE
LB
7
DQ0
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
8
DQ1
A4
A3
A2
9
DQ2
10
BS616LV4010EC
DQ3
11
VCC
BS616LV4010EI
12
GND
A1
A0
A17
A16
A15
A14
A13
A12
Address
Input
13
DQ4
22
2048
14
DQ5
15
DQ6
Row
Decoder
Memory Array
2048 x 2048
16
DQ7
17
WE
Buffer
18
A17
A8
A9
A10
A11
A12
19
A16
20
A15
21
A14
22
A13
2048
Data
16
16
Column I/O
Input
DQ0
Buffer
.
.
.
.
.
.
.
.
Write Driver
Sense Amp
16
128
Data
16
Output
Buffer
Column Decoder
DQ15
14
CE
WE
OE
UB
Control
Address Input Buffer
LB
A11 A10 A9 A8 A7
A6 A5
Vcc
Gnd
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
Revision 2.3
April. 2002
R0201-BS616LV4010
1