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BS616LV4011AI

更新时间： 2024-11-04 23:04:27
品牌 Logo 应用领域
BSI 静态存储器
页数 文件大小 规格书
10页 232K
描述
Very Low Power/Voltage CMOS SRAM 256K X 16 bit

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BS616LV4011AI 数据手册

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Very Low Power/Voltage CMOS SRAM  
256K X 16 bit  
BSI  
BS616LV4011  
„ DESCRIPTION  
„ FEATURES  
• Very low operation voltage : 2.4 ~ 5.5V  
• Very low power consumption :  
The BS616LV4011 is a high performance, very low power CMOS Static  
Random Access Memory organized as 262,144 words by 16 bits and  
operates from a wide range of 2.4V to 5.5V supply voltage.  
Advanced CMOS technology and circuit techniques provide both high  
speed and low power features with a typical CMOS standby current  
of 0.25uA and maximum access time of 70/100ns in 3V operation.  
Easy memory expansion is provided by active LOW chip  
enable(CE), active LOW output enable(OE) and three-state output  
drivers.  
Vcc = 3.0V  
C-grade: 20mA (Max.) operating current  
I-grade: 25mA (Max.) operating current  
0.25uA (Typ.) CMOS standby current  
C-grade: 45mA (Max.) operating current  
I-grade: 50mA (Max.) operating current  
1.5uA (Typ.) CMOS standby current  
Vcc = 5.0V  
• High speed access time :  
-70  
-10  
70ns (Max.) at Vcc = 3.0V  
100ns (Max.) at Vcc = 3.0V  
The BS616LV4011 has an automatic power down feature, reducing the  
power consumption significantly when chip is deselected.  
The BS616LV4011 is available in DICE form, JEDEC standard 44-pin  
TSOP Type II package and 48-pin BGA package.  
• Automatic power down when chip is deselected  
• Three state outputs and TTL compatible  
• Fully static operation  
• Data retention supply voltage as low as 1.5V  
• Easy expansion with CE and OE options  
• I/O Configuration x8/x16 selectable by LB and UB pin  
„ PRODUCT FAMILY  
POWER DISSIPATION  
SPEED  
( ns )  
(SICTCASBN1,DMBaxY)  
Operating  
PRODUCT  
FAMILY  
OPERATING  
Vcc  
( ICC, Max )  
PKG TYPE  
TEMPERATURE  
RANGE  
Vcc=  
3.0V  
Vcc=  
Vcc=  
Vcc=  
Vcc=  
5.0V  
3.0V  
5.0V  
3.0V  
BS616LV4011DC  
BS616LV4011EC  
BS616LV4011BC  
BS616LV4011AC  
BS616LV4011DI  
BS616LV4011EI  
BS616LV4011BI  
BS616LV4011AI  
DICE  
TSOP2-44  
BGA-48-0810  
BGA-48-0608  
DICE  
+0 O C to +70O  
-40 O C to +85O  
C
C
2.4V ~ 5.5V  
2.4V ~ 5.5V  
70/100  
70/100  
1.5uA  
15uA  
50uA  
20mA  
45mA  
TSOP2-44  
BGA-48-0810  
BGA-48-0608  
3uA  
25mA  
50mA  
„ BLOCK DIAGRAM  
„ PIN CONFIGURATIONS  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A4  
A5  
2
A3  
A6  
3
A2  
A7  
A4  
A3  
A2  
4
A1  
OE  
5
A0  
UB  
6
CE  
LB  
7
DQ0  
DQ15  
DQ14  
DQ13  
DQ12  
GND  
VCC  
DQ11  
DQ10  
DQ9  
DQ8  
NC  
8
A1  
A0  
DQ1  
Address  
9
DQ2  
22  
2048  
10  
BS616LV4011EC  
DQ3  
Input  
A17  
A16  
A15  
A14  
A13  
A12  
11  
Row  
VCC  
Memory Array  
2048 x 2048  
BS616LV4011EI  
12  
GND  
13  
Buffer  
DQ4  
14  
Decoder  
DQ5  
15  
DQ6  
16  
DQ7  
17  
WE  
18  
A17  
A8  
A9  
A10  
A11  
A12  
19  
2048  
A16  
20  
A15  
Data  
21  
A14  
16  
16  
16  
Column I/O  
22  
Input  
A13  
DQ0  
Buffer  
.
.
.
.
.
.
.
.
Write Driver  
Sense Amp  
128  
Data  
16  
Output  
Buffer  
Column Decoder  
DQ15  
14  
CE  
WE  
OE  
UB  
Control  
Address Input Buffer  
LB  
A11 A10 A9 A8 A7  
A6 A5  
Vcc  
Gnd  
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.  
Revision 2.4  
April 2002  
R0201-BS616LV4011  
1
1234567...10

中文翻译

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 		Very Low Power/Voltage CMOS SRAM 256K X 16 bit
BS616LV4011BI BSI

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 		Very Low Power/Voltage CMOS SRAM 256K X 16 bit
BS616LV4011DC BSI

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 		Very Low Power/Voltage CMOS SRAM 256K X 16 bit
BS616LV4011DI BSI

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BS616LV4015AI BSI

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