Datasheet > BS616LV4015EC

BS616LV4015EC

更新时间： 2024-11-04 22:33:59

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
10页	229K
描述
Very Low Power/Voltage CMOS SRAM 256K X 16 bit

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中文翻译

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BS616LV4015EC 数据手册

Very Low Power/Voltage CMOS SRAM

256K X 16 bit

BSI

BS616LV4015

DESCRIPTION

FEATURES

The BS616LV4015 is a high performance, very low power CMOS Static

Random Access Memory organized as 262,144 words by 16 bits and

operates from a wide range of 4.5V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 1.5uA and maximum access time of 55ns in 5V operation.

Easy memory expansion is provided by an active LOW chip

enable(CE) and active LOW output enable(OE) and three-state output

drivers.

• Operation voltage : 4.5 ~ 5.5V

• Low power consumption :

Vcc = 5.0V

C-grade: 45mA (Max.) operating current

I-grade: 50mA (Max.) operating current

1.5uA (Typ.) CMOS standby current

• High speed access time :

-70

-55

70ns (Max.) at Vcc = 5.0V

55ns (Max.) at Vcc = 5.0V

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

The BS616LV4015 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616LV4015 is available in DICE form, JEDEC standard 44-pin

TSOP Type II package and 48-pin BGA package.

• Data retention supply voltage as low as 2V

• Easy expansion with CE and OE options

• I/O Configuration x8/x16 selectable by LB and UB pin

PRODUCT FAMILY

POWER DISSIPATION

SPEED

( ns )

₍S_ICT_CA_SBN_1,D_MB_axY₎

Operating

PRODUCT

FAMILY

OPERATING

Vcc

( ICC, Max )

PKG TYPE

TEMPERATURE

RANGE

Vcc=

5.0V

Vcc=

5.0V

BS616LV4015DC

BS616LV4015EC

BS616LV4015BC

BS616LV4015AC

BS616LV4015DI

BS616LV4015EI

BS616LV4015BI

BS616LV4015AI

DICE

TSOP2-44

BGA-48-0810

BGA-48-0608

DICE

+0 ^OC to +70^O

-40^OC to +85^O

4.5V ~ 5.5V

70/55

15uA

45mA

TSOP2-44

BGA-48-0810

BGA-48-0608

50uA

50mA

BLOCK DIAGRAM

PIN CONFIGURATIONS

DQ0

DQ1

DQ2

DQ3

VCC

GND

DQ4

DQ5

DQ6

DQ7

DQ15

DQ14

DQ13

DQ12

GND

VCC

DQ11

DQ10

DQ9

DQ8

Address

2048

Input

A17

BS616LV4015EC

BS616LV4015EI

Row

Decoder

Memory Array

2048 x 2048

A16

Buffer

A15

A14

A13

A12

A17

A16

A15

A14

A13

A10

A11

A12

2048

Data

Column I/O

Input

DQ0

Buffer

Write Driver

Sense Amp

128

Data

Output

Buffer

Column Decoder

DQ15

Control

Address Input Buffer

A11 A10 A9 A8 A7

A6 A5

Vcc

Gnd

Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.

Revision 2.4

April 2002

R0201-BS616LV4015

12 3 4 5 6 7...10

中文翻译

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与BS616LV4015EC相关器件

型号	品牌	获取价格	描述	数据表
BS616LV4015EI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K X 16 bit
BS616LV4016	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K X 16 bit
BS616LV4016AC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K X 16 bit
BS616LV4016AC-55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K X 16 bit
BS616LV4016AC-70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K X 16 bit
BS616LV4016ACG55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K X 16 bit
BS616LV4016ACG70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K X 16 bit
BS616LV4016ACP55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K X 16 bit
BS616LV4016ACP70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K X 16 bit
BS616LV4016AI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K X 16 bit

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