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BS616LV4016DC-55 PDF预览

BS616LV4016DC-55

更新时间： 2024-11-05 22:20:19
品牌 Logo 应用领域
BSI 静态存储器
页数 文件大小 规格书
10页 266K
描述
Very Low Power/Voltage CMOS SRAM 256K X 16 bit

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中文翻译

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BS616LV4016DC-55 数据手册

 浏览型号BS616LV4016DC-55的Datasheet PDF文件第2页浏览型号BS616LV4016DC-55的Datasheet PDF文件第3页浏览型号BS616LV4016DC-55的Datasheet PDF文件第4页浏览型号BS616LV4016DC-55的Datasheet PDF文件第5页浏览型号BS616LV4016DC-55的Datasheet PDF文件第6页浏览型号BS616LV4016DC-55的Datasheet PDF文件第7页 
Very Low Power/Voltage CMOS SRAM  
BSI 256K X 16 bit  
• Wide Vcc operation voltage : 2.4V ~ 3.6V  
• Very low power consumption :  
Vcc = 3.0V C-grade: 25mA (@55ns) operating current  
I -grade: 27mA (@55ns) operating current  
C-grade: 17mA (@70ns) operating current  
I -grade: 18mA (@70ns) operating current  
0.45uA (Typ.) CMOS standby current  
• High speed access time :  
55ns (Max.) at Vcc = 2.7~3.6V / 85oC  
70ns (Max.) at Vcc = 2.4~3.6V / 85oC  
• Automatic power down when chip is deselected  
• Three state outputs and TTL compatible  
• Fully static operation  
BS616LV4016  
• Easy expansion with CE and OE options  
„ FEATURES  
• I/O Configuration x8/x16 selectable by LB and UB pin  
„ DESCRIPTION  
The BS616LV4016 is a high performance, very low power CMOS Static  
Random Access Memory organized as 262,144 words by 16 bits and  
operates from a wide range of 2.4V to 3.6V supply voltage.  
Advanced CMOS technology and circuit techniques provide both high  
speed and low power features with a typical CMOS standby current of  
0.45uA at 3.0V/25oC and maximum access time of 55ns at 2.7V/85oC.  
Easy memory expansion is provided by an active LOW chip enable (CE)  
,active LOW output enable(OE) and three-state output drivers.  
The BS616LV4016 has an automatic power down feature, reducing the  
power consumption significantly when chip is deselected.  
-55  
-70  
The BS616LV4016 is available in DICE form , JEDEC standard 44-pin  
TSOP Type II package and 48-ball BGA package.  
• Data retention supply voltage as low as 1.5V  
„ PRODUCT FAMILY  
POWER DISSIPATION  
SPEED  
Operating  
STANDBY  
(
ns )  
OPERATING  
PRODUCT FAMILY  
Vcc  
RANGE  
( ICCSB1 , Max )  
( I CC , Max )  
PKG TYPE  
TEMPERATURE  
55ns: 2.7~3.6V  
70ns: 2.4~3.6V  
Vcc =  
Vcc = 3.0V  
3.0V  
55ns  
70ns  
BS616LV4016DC  
BS616LV4016EC  
DICE  
+0O C to +70O  
C
TSOP2-44  
BGA-48-0608  
DICE  
2.4V ~ 3.6V  
2.4V ~ 3.6V  
55 / 70  
55 / 70  
25mA  
27mA  
17mA  
6.0uA  
8.0uA  
BS616LV4016AC  
BS616LV4016DI  
-40O C to +85OC  
TSOP2-44  
BGA-48-0608  
BS616LV4016EI  
BS616LV4016AI  
18mA  
„ PIN CONFIGURATIONS  
„ BLOCK DIAGRAM  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A4  
A3  
A5  
A6  
A7  
OE  
UB  
LB  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
A2  
A1  
A0  
CE  
A4  
A3  
A2  
DQ0  
DQ1  
DQ2  
DQ3  
VCC  
GND  
DQ4  
DQ5  
DQ6  
DQ7  
WE  
A17  
A16  
A15  
A14  
A13  
DQ15  
DQ14  
DQ13  
DQ12  
GND  
VCC  
DQ11  
DQ10  
DQ9  
DQ8  
NC  
A8  
A9  
A10  
A11  
A12  
A1  
Address  
22  
2048  
A0  
A17  
A16  
BS616LV4016EC  
BS616LV4016EI  
Input  
Row  
Memory Array  
2048 x 2048  
Buffer  
A15  
A14  
A13  
A12  
Decoder  
2048  
Data  
Input  
Buffer  
16  
16  
16  
Column I/O  
DQ0  
.
.
.
.
.
.
.
.
Write Driver  
Sense Amp  
128  
Data  
Output  
16  
Buffer  
Column Decoder  
DQ15  
14  
CE  
WE  
OE  
UB  
Control  
Address Input Buffer  
LB  
A11 A10 A9 A8 A7  
A6 A5  
Vcc  
Gnd  
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.  
Revision 1.1  
R0201-BS616LV4016  
1
Jan.  
2004  
1234567...10

中文翻译

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