Very Low Power/Voltage CMOS SRAM
256K X 16 bit
BSI
BS616LV4011
DESCRIPTION
FEATURES
• Very low operation voltage : 2.4 ~ 5.5V
• Very low power consumption :
The BS616LV4011 is a high performance, very low power CMOS Static
Random Access Memory organized as 262,144 words by 16 bits and
operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.25uA and maximum access time of 70/100ns in 3V operation.
Easy memory expansion is provided by active LOW chip
enable(CE), active LOW output enable(OE) and three-state output
drivers.
Vcc = 3.0V
C-grade: 20mA (Max.) operating current
I-grade: 25mA (Max.) operating current
0.25uA (Typ.) CMOS standby current
C-grade: 45mA (Max.) operating current
I-grade: 50mA (Max.) operating current
1.5uA (Typ.) CMOS standby current
Vcc = 5.0V
• High speed access time :
-70
-10
70ns (Max.) at Vcc = 3.0V
100ns (Max.) at Vcc = 3.0V
The BS616LV4011 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV4011 is available in DICE form, JEDEC standard 44-pin
TSOP Type II package and 48-pin BGA package.
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
PRODUCT FAMILY
POWER DISSIPATION
SPEED
( ns )
(SICTCASBN1,DMBaxY)
Operating
PRODUCT
FAMILY
OPERATING
Vcc
( ICC, Max )
PKG TYPE
TEMPERATURE
RANGE
Vcc=
3.0V
Vcc=
Vcc=
Vcc=
Vcc=
5.0V
3.0V
5.0V
3.0V
BS616LV4011DC
BS616LV4011EC
BS616LV4011BC
BS616LV4011AC
BS616LV4011DI
BS616LV4011EI
BS616LV4011BI
BS616LV4011AI
DICE
TSOP2-44
BGA-48-0810
BGA-48-0608
DICE
+0 O C to +70O
-40 O C to +85O
C
C
2.4V ~ 5.5V
2.4V ~ 5.5V
70/100
70/100
1.5uA
15uA
50uA
20mA
45mA
TSOP2-44
BGA-48-0810
BGA-48-0608
3uA
25mA
50mA
BLOCK DIAGRAM
PIN CONFIGURATIONS
1
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A4
A5
2
A3
A6
3
A2
A7
A4
A3
A2
4
A1
OE
5
A0
UB
6
CE
LB
7
DQ0
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
8
A1
A0
DQ1
Address
9
DQ2
22
2048
10
BS616LV4011EC
DQ3
Input
A17
A16
A15
A14
A13
A12
11
Row
VCC
Memory Array
2048 x 2048
BS616LV4011EI
12
GND
13
Buffer
DQ4
14
Decoder
DQ5
15
DQ6
16
DQ7
17
WE
18
A17
A8
A9
A10
A11
A12
19
2048
A16
20
A15
Data
21
A14
16
16
16
Column I/O
22
Input
A13
DQ0
Buffer
.
.
.
.
.
.
.
.
Write Driver
Sense Amp
128
Data
16
Output
Buffer
Column Decoder
DQ15
14
CE
WE
OE
UB
Control
Address Input Buffer
LB
A11 A10 A9 A8 A7
A6 A5
Vcc
Gnd
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
Revision 2.4
April 2002
R0201-BS616LV4011
1
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