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BS616LV4011BI PDF预览

BS616LV4011BI

更新时间: 2022-12-14 13:33:36
品牌 Logo 应用领域
BSI 静态存储器
页数 文件大小 规格书
10页 232K
描述
Very Low Power/Voltage CMOS SRAM 256K X 16 bit

BS616LV4011BI 数据手册

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BSI  
BS616LV4011  
„ PIN DESCRIPTIONS  
Name  
Function  
A0-A17 Address Input  
These 18 address inputs select one of the 262,144 x 16-bit words in the RAM.  
CE Chip Enable Input  
WE Write Enable Input  
CE is active LOW. Chip enables must be active to read from or write to the device. if  
chip enable is not active, the device is deselected and is in a standby power mode.  
The DQ pins will be in the high impedance state when the device is deselected.  
The write enable input is active LOW and controls read and write operations. With the  
chip selected, when WE is HIGH and OE is LOW, output data will be present on the  
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the  
selected memory location.  
OE Output Enable Input  
The output enable input is active LOW. If the output enable is active while the chip is  
selected and the write enable is inactive, data will be present on the DQ pins and they  
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.  
Lower byte and upper byte data input/output control pins.  
LB and UB Data Byte Control Input  
DQ0 - DQ15 Data Input/Output  
Ports  
These 16 bi-directional ports are used to read data from or write data into the RAM.  
Vcc  
Power Supply  
Ground  
Gnd  
„ TRUTH TABLE  
MODE  
CE  
H
WE  
X
OE  
X
LB  
UB  
DQ0~DQ7  
DQ8~DQ15  
Vcc CURRENT  
Not selected  
X
X
High Z  
High Z  
ICCSB, ICCSB1  
(Power Down)  
Output Disabled  
L
H
H
X
L
H
L
L
H
L
X
L
L
H
L
L
High Z  
Dout  
High Z  
Dout  
Din  
High Z  
Dout  
Dout  
High Z  
Din  
ICC  
ICC  
ICC  
ICC  
ICC  
ICC  
ICC  
Read  
L
L
H
L
L
Write  
X
X
Din  
Din  
X
H
Revision 2.4  
April 2002  
R0201-BS616LV4011  
2

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