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BS107RL PDF预览

BS107RL

更新时间: 2024-11-19 19:50:15
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
4页 93K
描述
TRANSISTOR 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, CASE 29-11, 3 PIN, FET General Purpose Small Signal

BS107RL 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.19其他特性:EUROPEAN PART NUMBER
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (ID):0.25 A最大漏源导通电阻:14 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):225
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BS107RL 数据手册

 浏览型号BS107RL的Datasheet PDF文件第2页浏览型号BS107RL的Datasheet PDF文件第3页浏览型号BS107RL的Datasheet PDF文件第4页 
BS107A  
Small Signal MOSFET  
250 mAmps, 200 Volts  
NChannel TO92  
Features  
http://onsemi.com  
AEC Qualified  
250 mAMPS, 200 VOLTS  
PPAP Capable  
RDS(on) = 6.4 W  
This is a PbFree Device*  
NChannel  
D
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
G
DrainSource Voltage  
V
DS  
200  
Vdc  
GateSource Voltage  
Continuous  
V
V
GSM  
20  
30  
Vdc  
Vpk  
S
GS  
Nonrepetitive (t 50 ms)  
p
Drain Current  
Continuous (Note 1)  
Pulsed (Note 2)  
mAdc  
MARKING  
DIAGRAM  
I
250  
500  
D
I
DM  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
350  
mW  
A
D
A
BS107A  
YWW G  
G
Operating and Storage Junction  
Temperature Range  
T , T  
J
55 to  
150  
°C  
stg  
TO92  
CASE 2911  
STYLE 30  
1
2
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. The Power Dissipation of the package may result in a lower continuous drain  
current.  
3
A
Y
= Assembly Location  
= Year  
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.  
WW  
G
= Work Week  
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
BS107ARL1G  
Package  
Shipping  
TO92  
2000 / Tape & Reel  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
April, 2011 Rev. 6  
BS107/D  
 

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TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 130MA I(D) | TO-92VAR