Datasheet > BS108/E7

BS108/E7

更新时间： 2024-11-18 23:35:43

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	206K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 240V V(BR)DSS \| 230MA I(D) \| TO-92

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BS108/E7 数据手册

BS108

Vishay Semiconductors

formerly General Semiconductor

DMOS Transistor (N-Channel)

TO-226AA (TO-92)

Features

• High breakdown voltage

0.142 (3.6)

0.181 (4.6)

• High input impedance

• Low gate threshold voltage

• Low drain-source ON resistance

• High-speed switching

• No minority carrier storage time

• CMOS logic compatible input

• No thermal runaway

• No secondary breakdown

• Specially suited for telephone subsets

• On special request, this transistor is also

manufactured in the pin configuration TO-18.

max.

0.022 (0.55)

Mechanical Data

Case: TO-92 Plastic Package

0.098 (2.5)

Dimensions in inches

and (millimeters)

Weight: approx. 0.18g

Packaging Codes/Options:

Bottom

View

E6/Bulk- 5K per container, 20K/box

E7/4K per Ammo tape, 20K/box

Maximum Ratings and Thermal Characteristics (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_DSS

V_DGS

V_GS

I_D

Limit

Unit

Drain-Source Voltage

240

Drain-Gate Voltage

240

Gate-Source-Voltage (pulsed)

Drain Current (continuous)

Power Dissipation at T_amb= 25°C

Thermal Resistance Junction to Ambient Air

Junction Temperature

230

0.83⁽¹⁾

P_tot

R_θJA

T_j

150⁽¹⁾

°C/W

°C

150

Storage Temperature Range

T_S

–65 to +150

°C

Note:

(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.

Document Number 88178

10-May-02

www.vishay.com

12 3 4 5

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