BS107RLRP

更新时间： 2024-11-19 13:05:59

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体开关小信号场效应晶体管
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数据手册

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BS107RLRP 数据手册

Order this document

by BS107/D

SEMICONDUCTOR TECHNICAL DATA

N–Channel — Enhancement

1 DRAIN

GATE

3 SOURCE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage

200

Vdc

Gate–Source Voltage

— Continuous

— Non–repetitive (t ≤ 50 µs)

±20

±30

Vdc

Vpk

CASE 29–04, STYLE 30

TO–92 (TO–226AA)

GSM

Drain Current

mAdc

(1)

Continuous

(2)

250

500

Pulsed

Total Device Dissipation @ T = 25°C

Derate above 25°C

350

Operating and Storage Junction

Temperature Range

T , T

J stg

–55 to 150

°C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Zero–Gate–Voltage Drain Current (V

= 130 Vdc, V

= 0)

DSS

—

200

—

nAdc

Vdc

= 0, I = 100 µAdc)

Drain–Source Breakdown Voltage (V

(BR)DSX

Gate Reverse Current (V

= 15 Vdc, V

= 0)

0.01

nAdc

GSS

(2)

ON CHARACTERISTICS

Gate Threshold Voltage (I = 1.0 mAdc, V

= V

)

1.0

—

3.0

Vdc

GS(Th)

Static Drain–Source On Resistance

Ohms

DS(on)

BS107 (V

BS107A (V

= 2.6 Vdc, I = 20 mAdc)

—

= 10 Vdc, I = 200 mAdc)

= 10 Vdc)

(I = 100 mAdc)

—

4.5

4.8

6.0

6.4

(I = 250 mAdc)

SMALL–SIGNAL CHARACTERISTICS

Input Capacitance

—

6.0

—

iss

rss

oss

= 25 Vdc, V

= 0, f = 1.0 MHz)

Reverse Transfer Capacitance

= 25 Vdc, V

= 0, f = 1.0 MHz)

Output Capacitance

(V = 25 Vdc, V

—

= 0, f = 1.0 MHz)

Forward Transconductance

(V = 25 Vdc, I = 250 mAdc)

200

400

mmhos

SWITCHING CHARACTERISTICS

Turn–On Time

—

6.0

Turn–Off Time

off

1. The Power Dissipation of the package may result in a lower continuous drain current.

2. Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

REV 1

M_Mot_oo_tor_ro_ol_la_a,S_Inm_c.a₁₉ll₉–₇Signal Transistors, FETs and Diodes Device Data

12 3 4

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