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BR93H56RFJ-2CE2 PDF预览

BR93H56RFJ-2CE2

更新时间: 2024-09-20 12:42:35
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
32页 754K
描述
Serial EEPROM Series Automotive EEPROM 125 Operation Microwire BUS EEPROM

BR93H56RFJ-2CE2 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SOP-8Reach Compliance Code:compliant
Factory Lead Time:16 weeks风险等级:1.71
其他特性:SEATED HT-CALCULATED最大时钟频率 (fCLK):2 MHz
数据保留时间-最小值:100耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8长度:4.9 mm
内存密度:2048 bit内存集成电路类型:EEPROM
内存宽度:16功能数量:1
端子数量:8字数:128 words
字数代码:128工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:128X16封装主体材料:PLASTIC/EPOXY
封装代码:LSOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, LOW PROFILE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/5 V认证状态:Not Qualified
筛选级别:AEC-Q100座面最大高度:1.65 mm
串行总线类型:MICROWIRE最大待机电流:0.00001 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):4 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mm最长写入周期时间 (tWC):4 ms
写保护:SOFTWAREBase Number Matches:1

BR93H56RFJ-2CE2 数据手册

 浏览型号BR93H56RFJ-2CE2的Datasheet PDF文件第2页浏览型号BR93H56RFJ-2CE2的Datasheet PDF文件第3页浏览型号BR93H56RFJ-2CE2的Datasheet PDF文件第4页浏览型号BR93H56RFJ-2CE2的Datasheet PDF文件第5页浏览型号BR93H56RFJ-2CE2的Datasheet PDF文件第6页浏览型号BR93H56RFJ-2CE2的Datasheet PDF文件第7页 
Datasheet  
Serial EEPROM Series Automotive EEPROM  
125Operation Microwire BUS EEPROM (3-wire)  
BR93H56-2C  
General Description  
Packages  
(Typ)  
(Typ)  
(Max)  
BR93H56-2C is a serial EEPROM of serial 3-line interface  
method.  
MSOP8  
2.90mm x 4.00mm x 0.90mm  
3.00mm x 6.40mm x 1.20mm  
5.00mm x 6.20mm x 1.65mm  
4.90mm x 6.00mm x 1.65mm  
TSSOP-B8  
SOP8  
SOP-J8  
Features  
„
„
Conforming to Microwire BUS  
Withstands Electrostatic Voltage up to 6kV  
(HBM method typ.)  
„
„
„
„
Wide Temperature Range -40to +125℃  
Same package line-up and same pin configuration  
2.5V to 5.5V Single Supply Voltage Operation  
Address Auto Increment Function at READ  
Operation  
„
Prevention of write mistake  
¾ Write prohibition at power on  
¾ Write prohibition by command code  
¾ Write mistake prevention circuit at low voltage  
Self-timed programming cycle  
Program Condition Display by READY / BUSY  
Low Supply Current  
„
„
„
TSSOP-B8  
MSOP8  
¾ Write Operation (5V) : 0.8mA (Typ)  
¾ Read Operation (5V) : 0.5mA (Typ)  
¾ Standby Operation (5V) : 0.1μA (Typ)  
Compact package: MSOP8 / TSSOP-B8 / SOP8 /  
SOP-J8  
„
„
High-Reliability using ROHM Original  
Double-Cell Structure  
„
„
„
„
More than 100 years data retention (Ta125)  
More than 1 million write cycles (Ta125)  
Data set to FFFFh on all addresses at shipment  
AEC-Q100 Qualified  
SOP-J8  
SOP8  
BR93H56-2C  
MSOP8  
RFVM  
TSSOP-B8  
SOP8  
SOP-J8  
RFJ  
Package Type  
Product Name  
BR93H56-2C  
Capacity  
2Kbit  
Bit Format  
Supply Voltage  
2.5V to 5.5V  
RFVT  
RF  
128×16  
Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
TSZ2211114001  
TSZ02201-0R1R0G100020-1-2  
19.DEC.2012 Rev.002  
1/29  

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