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BR93H56RF-WCE2 PDF预览

BR93H56RF-WCE2

更新时间: 2024-01-07 04:46:10
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
30页 944K
描述
EEPROM, 128X16, Serial, CMOS, PDSO8, SOP-8

BR93H56RF-WCE2 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SOP-8Reach Compliance Code:compliant
Factory Lead Time:12 weeks风险等级:1.48
Is Samacsys:N最大时钟频率 (fCLK):1.25 MHz
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8长度:5 mm
内存密度:2048 bit内存集成电路类型:EEPROM
内存宽度:16功能数量:1
端子数量:8字数:128 words
字数代码:128工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:128X16封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:2/5 V认证状态:Not Qualified
筛选级别:AEC-Q100座面最大高度:1.71 mm
串行总线类型:3-WIRE最大待机电流:0.000002 A
子类别:EEPROMs最大压摆率:0.0015 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):4 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:4.4 mm最长写入周期时间 (tWC):10 ms
写保护:SOFTWAREBase Number Matches:1

BR93H56RF-WCE2 数据手册

 浏览型号BR93H56RF-WCE2的Datasheet PDF文件第2页浏览型号BR93H56RF-WCE2的Datasheet PDF文件第3页浏览型号BR93H56RF-WCE2的Datasheet PDF文件第4页浏览型号BR93H56RF-WCE2的Datasheet PDF文件第5页浏览型号BR93H56RF-WCE2的Datasheet PDF文件第6页浏览型号BR93H56RF-WCE2的Datasheet PDF文件第7页 
Datasheet  
Serial EEPROM Series Automotive EEPROM  
125Operation Microwire BUS EEPROM(3-Wire)  
BR93Hxx-WC  
(2K 4K 8K 16K)  
General Description  
BR93Hxx-WC is a serial EEPROM of serial 3-line interface method.  
Features  
Packages W(Typ.) x D(Typ.) x H(Max.)  
„ Conforming to Microwire BUS  
„ Withstands electrostatic voltage 8kV,  
(HBM method typ.,except BR93H66RFVM-WC)  
„ Wide temperature range -40to +125℃  
„ Same package line up and same pin configuration  
„ 2.7V to 5.5V single supply voltage operation  
„ Address auto increment function at read operation  
„ Write mistake prevention function  
¾
¾
¾
Write prohibition at power on  
Write prohibition by command code  
Write mistake prevention circuit at low voltage  
SOP-J8  
4.90mm x 6.00mm x 1.65mm  
SOP8  
5.00mm x 6.20mm x 1.71mm  
„ Program cycle auto delete and auto end function  
„ Program condition display by READY / BUSY  
„ Low current consumption  
¾
¾
¾
At write operation (at 5V)  
At read operation (at 5V)  
At standby condition (at 5V) : 0.1μA(Typ.)(CMOS input)  
: 0.6mA (Typ.)  
: 0.6mA (Typ.)  
MSOP8  
„ Built-in noise filter CS, SK, DI terminals  
„ High reliability by ROHM original Double-Cell structure  
„ Data retention for 20 years (Ta125)  
„ Endurance up to 300,000 times (Ta125)  
„ Data at shipment all address FFFFh  
„ AEC-Q100 Qualified  
2.90mm x 4.00mm x 0.90mm  
BR93Hxx-WC  
Package type  
SOP8  
RF  
SOP-J8  
MSOP8  
RFVM  
Power source  
voltage  
Capacity  
Bit format  
Type  
RFJ  
2Kbit  
4Kbit  
8Kbit  
16Kbit  
128×16  
256×16  
512×16  
1K×16  
BR93H56-WC  
BR93H66-WC  
BR93H76-WC  
BR93H86-WC  
2.7V to 5.5V  
2.7V to 5.5V  
2.7V to 5.5V  
2.7V to 5.5V  
Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays  
www.rohm.com  
TSZ02201-0R1R0G100160-1-2  
6.Nov.2013 Rev.002  
©2012 ROHM Co., Ltd. All rights reserved.  
1/27  
TSZ2211114001  

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