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BR93H56RF-WE1 PDF预览

BR93H56RF-WE1

更新时间: 2024-11-10 20:00:15
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
6页 257K
描述
EEPROM Card, 128X16, Serial, CMOS, PDSO8

BR93H56RF-WE1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Contact Manufacturer包装说明:SOP, SOP8,.25
Reach Compliance Code:compliant风险等级:5.5
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
内存密度:2048 bit内存集成电路类型:EEPROM CARD
内存宽度:16湿度敏感等级:1
端子数量:8字数:128 words
字数代码:128最高工作温度:125 °C
最低工作温度:-40 °C组织:128X16
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):225电源:3/5 V
编程电压:2.7 V认证状态:Not Qualified
串行总线类型:MICROWIRE最大待机电流:0.00001 A
子类别:EEPROMs最大压摆率:0.0045 mA
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:MATTE TIN
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
写保护:SOFTWAREBase Number Matches:1

BR93H56RF-WE1 数据手册

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