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BR93H56RFVM-2CTR PDF预览

BR93H56RFVM-2CTR

更新时间: 2024-02-12 14:17:45
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
32页 754K
描述
Serial EEPROM Series Automotive EEPROM 125 Operation Microwire BUS EEPROM

BR93H56RFVM-2CTR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:MSOP-8Reach Compliance Code:compliant
Factory Lead Time:16 weeks风险等级:5.69
最大时钟频率 (fCLK):2 MHz数据保留时间-最小值:100
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
长度:2.9 mm内存密度:2048 bit
内存集成电路类型:EEPROM内存宽度:16
功能数量:1端子数量:8
字数:128 words字数代码:128
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:128X16
封装主体材料:PLASTIC/EPOXY封装代码:VSSOP
封装等效代码:TSSOP8,.16封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/5 V
认证状态:Not Qualified筛选级别:AEC-Q100
座面最大高度:0.9 mm串行总线类型:MICROWIRE
最大待机电流:0.00001 A子类别:EEPROMs
最大压摆率:0.003 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):4 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:2.8 mm
最长写入周期时间 (tWC):4 ms写保护:SOFTWARE
Base Number Matches:1

BR93H56RFVM-2CTR 数据手册

 浏览型号BR93H56RFVM-2CTR的Datasheet PDF文件第2页浏览型号BR93H56RFVM-2CTR的Datasheet PDF文件第3页浏览型号BR93H56RFVM-2CTR的Datasheet PDF文件第4页浏览型号BR93H56RFVM-2CTR的Datasheet PDF文件第5页浏览型号BR93H56RFVM-2CTR的Datasheet PDF文件第6页浏览型号BR93H56RFVM-2CTR的Datasheet PDF文件第7页 
Datasheet  
Serial EEPROM Series Automotive EEPROM  
125Operation Microwire BUS EEPROM (3-wire)  
BR93H56-2C  
General Description  
Packages  
(Typ)  
(Typ)  
(Max)  
BR93H56-2C is a serial EEPROM of serial 3-line interface  
method.  
MSOP8  
2.90mm x 4.00mm x 0.90mm  
3.00mm x 6.40mm x 1.20mm  
5.00mm x 6.20mm x 1.65mm  
4.90mm x 6.00mm x 1.65mm  
TSSOP-B8  
SOP8  
SOP-J8  
Features  
„
„
Conforming to Microwire BUS  
Withstands Electrostatic Voltage up to 6kV  
(HBM method typ.)  
„
„
„
„
Wide Temperature Range -40to +125℃  
Same package line-up and same pin configuration  
2.5V to 5.5V Single Supply Voltage Operation  
Address Auto Increment Function at READ  
Operation  
„
Prevention of write mistake  
¾ Write prohibition at power on  
¾ Write prohibition by command code  
¾ Write mistake prevention circuit at low voltage  
Self-timed programming cycle  
Program Condition Display by READY / BUSY  
Low Supply Current  
„
„
„
TSSOP-B8  
MSOP8  
¾ Write Operation (5V) : 0.8mA (Typ)  
¾ Read Operation (5V) : 0.5mA (Typ)  
¾ Standby Operation (5V) : 0.1μA (Typ)  
Compact package: MSOP8 / TSSOP-B8 / SOP8 /  
SOP-J8  
„
„
High-Reliability using ROHM Original  
Double-Cell Structure  
„
„
„
„
More than 100 years data retention (Ta125)  
More than 1 million write cycles (Ta125)  
Data set to FFFFh on all addresses at shipment  
AEC-Q100 Qualified  
SOP-J8  
SOP8  
BR93H56-2C  
MSOP8  
RFVM  
TSSOP-B8  
SOP8  
SOP-J8  
RFJ  
Package Type  
Product Name  
BR93H56-2C  
Capacity  
2Kbit  
Bit Format  
Supply Voltage  
2.5V to 5.5V  
RFVT  
RF  
128×16  
Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
TSZ2211114001  
TSZ02201-0R1R0G100020-1-2  
19.DEC.2012 Rev.002  
1/29  

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