Datasheet > BLF2425M9L30J

BLF2425M9L30J

更新时间： 2024-11-25 22:07:43

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其他 - ETC		/
页数	文件大小	规格书
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描述
RF FET LDMOS 65V 18.5DB SOT1135A

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BLF2425M9L30J 数据手册

BLF2425M9L30;

BLF2425M9LS30

Power LDMOS transistor

Rev. 5 — 13 June 2019

Product data sheet

1. Product profile

1.1 General description

30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at

frequencies from 2400 MHz to 2500 MHz.

The BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW

applications and are assembled in a high performance ceramic package.

Table 1.

Typical performance

RF performance at T_case= 25 C in a common source class-AB production test circuit.

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

_D

(MHz)

2450

(dB)

18.5

(%)

1.2 Features and benefits

 High efficiency

 High power gain

 Excellent ruggedness

 Excellent thermal stability

 Integrated ESD protection

 Designed for broadband operation (2400 MHz to 2500 MHz)

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 Industrial, scientific and medical applications in the frequency range from 2400 MHz to

2500 MHz

12 3 4 5 6 7...12

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