Datasheet > BLF178P,112

BLF178P,112

更新时间： 2024-11-21 22:07:43

品牌	Logo	应用领域
其他 - ETC		局域网放大器晶体管
页数	文件大小	规格书
13页	1394K
描述
RF FET LDMOS 110V 28.5DB SOT539A

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BLF178P,112 数据手册

BLF178P

Power LDMOS transistor

Rev. 3 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

A 1200 W LDMOS power transistor for broadcast applications and industrial applications

in the HF to 110 MHz band.

Table 1.

Application information

Test signal

V_DS

(V)

P_L

G_p

_D

(%)

(MHz)

108

(W)

(dB)

1000

1200

pulsed RF

28.5

1.2 Features and benefits

 Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an

_Dqof 40 mA, a t_pof 100 s with  of 20 %:

 Output power = 1200 W

 Power gain = 28.5 dB

 Efficiency = 75 %

 Easy power control

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (10 MHz to 110 MHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Industrial, scientific and medical applications

 FM transmitter applications

12 3 4 5 6 7...13

中文翻译

下载PDF

与BLF178P,112相关器件

型号	品牌	获取价格	描述	数据表
BLF178XR	NXP	获取价格	Power LDMOS transistor
BLF178XR(S)	NXP	获取价格	RF Manual 16th edition
BLF178XR,112	ETC	获取价格	RF FET LDMOS 110V 28DB SOT539A
BLF178XR112	NXP	获取价格	Power LDMOS transistor
BLF178XRS	NXP	获取价格	Power LDMOS transistor
BLF178XRS,112	ETC	获取价格	RF FET LDMOS 110V 28DB SOT539B
BLF1820-40	PHILIPS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
BLF1820-70	NXP	获取价格	UHF power LDMOS transistor
BLF1820-90	NXP	获取价格	UHF power LDMOS transistor
BLF1820-90,112	NXP	获取价格	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, FM-2, FET RF Power