Datasheet > BFU520W

BFU520W

更新时间： 2024-03-03 10:09:40

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
22页	296K
描述
NPN Wideband Silicon RF Transistor

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BFU520W 数据手册

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BFU520W

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NPN wideband silicon RF transistor

Rev. 1 — 13 January 2014

Product data sheet

1. Product profile

1.1 General description

NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323

package.

The BFU520W is part of the BFU5 family of transistors, suitable for small signal to

medium power applications up to 2 GHz.

1.2 Features and benefits

 Low noise, high breakdown RF transistor

 AEC-Q101 qualified

 Minimum noise figure (NF_min) = 0.6 dB at 900 MHz

 Maximum stable gain 18.5 dB at 900 MHz

 11 GHz f_Tsilicon technology

1.3 Applications

 Applications requiring high supply voltages and high breakdown voltages

 Broadband amplifiers up to 2 GHz

 Low noise amplifiers for ISM applications

 ISM band oscillators

1.4 Quick reference data

Table 1.

Quick reference data

T_amb= 25 C unless otherwise specified

Symbol Parameter

Conditions

open emitter

open base

Min Typ Max Unit

V_CB

V_CE

collector-base voltage

collector-emitter voltage

shorted base

open collector

V_EB

I_C

emitter-base voltage

collector current

[1]

P_tot

h_FE

C_c

total power dissipation

DC current gain

T_sp 87 C

450 mW

200

I_C= 5 mA; V_CE= 8 V

V_CB= 8 V; f = 1 MHz

I_C= 10 mA; V_CE= 8 V; f = 900 MHz

0.55

collector capacitance

transition frequency

f_T

GHz

12 3 4 5 6 7...22

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