Datasheet > BFS17S-E6433

BFS17S-E6433

更新时间： 2024-11-21 14:48:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	69K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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BFS17S-E6433 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
Is Samacsys：	N	最大集电极电流 (IC)：	0.025 A
最小直流电流增益 (hFE)：	20	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.28 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	1000 MHz	Base Number Matches：	1

BFS17S-E6433 数据手册

BFS17S

NPN Silicon RF Transistor

• For broadband amplifiers up to 1 GHz at

collector currents from 1 mA to 20 mA

• BFS17S: For orientation in reel see

package information below

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFS17S

MCs

1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

CEO

CBO

EBO

2.5

°C

Collector current

Peak collector current, f = 10 MHz

280

Total power dissipation

tot

T ≤ 93 °C

150

Junction temperature

Ambient temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Parameter

Symbol

Value

Unit

K/W

Junction - soldering point

≤ 240

thJS

¹Pb-containing package may be available upon special request

²T is measured on the collector lead at the soldering point to the pcb

³For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-03-30

12 3 4 5 6 7

中文翻译

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