生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.84 |
最大集电极电流 (IC): | 0.03 A | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 35 |
最高频带: | VERY HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFS18R-TAPE-7 | NXP |
获取价格 |
TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
BFS18-TAPE-13 | NXP |
获取价格 |
TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
BFS18-TAPE-7 | NXP |
获取价格 |
TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
BFS18TRL | YAGEO |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili | |
BFS18TRL13 | YAGEO |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili | |
BFS19 | TYSEMI |
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Low current (max. 30 mA) Low Voltage (max. 20 V) Collector current IC 30 mA | |
BFS19 | NXP |
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NPN medium frequency transistor | |
BFS19 | INFINEON |
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npn silicon rf transistor | |
BFS19 | DIOTEC |
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Surface mount Si-Epitaxial PlanarTransistors | |
BFS19 | KEXIN |
获取价格 |
NPN Medium Frequency Transistor |