BFS17TC

更新时间： 2024-11-25 13:05:55

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美台 - DIODES		晶体晶体管光电二极管放大器局域网
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数据手册

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BFS17TC 数据手册

BFS17L

BFS17H

SOT23 NPN SILICON PLANAR

RF TRANSISTORS

ISSUE 4 – MARCH 2001

PARTMARKING DETAILS —

BFS17L - E1L

BFS17H - E1H

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

2.5

Peak Pulse Current

°C

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

P_tot

330

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

amb

PARAMETER

SYMBOL MIN.

TYP.

MAX. UNIT CONDITIONS.

Collector Cut-Off

Current

I_CBO

µA

V_CB=10V, I_E=0

_CB=10V, I_E=0,

T_amb= 100°C

Static Forward Current h_FE

Transfer Ratio

BFS17L

BFS17H

100

200

125

I_C=2.0mA, V_CE=1.0V

I_C=25mA, V_CE=1.0V

Transition

Frequency

f_T

1.0

1.3

GHz

I_C=2.0mA, V_CE=5.0V

f=500MHz

I_C=25mA, V_CE=5.0V

f=500MHz

Feedback Capacitance

Output Capacitance

Input Capacitance

Noise Figure

-C_re

C_obo

C_ibo

0.85

I_C=2.0mA, V_CE=5V, f=1MHz

V_CB=10V, f=1MHz

1.5

2.0

V_EB=0.5V, f=1MHz

4.5

-45

I_C=2.0mA, V_CE=5.0V

R_S=50Ω, f=500MHz

Intermodulation

Distortion

d_im

I_C=10mA, V_CE=6.0V

R_L=37.5Ω,T_amb=25°C

V_o=100mV at f_p=183MHz

V_o=100mV at f_q=200MHz

measured at f_(2q-p)=217MHz

Spice parameter data is available upon request for this device

TBA

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