Datasheet > BFR35AP_07

BFR35AP_07

更新时间： 2024-11-16 08:52:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
5页	54K
描述
NPN Silicon RF Transistor

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中文翻译

获取价格

数据手册

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BFR35AP_07 数据手册

BFR35AP

NPN Silicon RF Transistor

• For low distortion broadband amplifiers and

oscillators up to 2GHz at collector currents

from 0.5mA to 20 mA

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFR35AP

GEs

SOT23

1 = B

2 = E

3 = C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

2.5

EBO

°C

Base current

280

Total power dissipation

tot

T ≤ 48°C

150

Junction temperature

Ambient temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Parameter

Symbol

Value

Unit

K/W

Junction - soldering point

≤ 365

thJS

¹Pb-containing package may be available upon special request

²T is measured on the collector lead at the soldering point to the pcb

³For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-03-30

12 3 4 5

中文翻译

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