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BFR360T-E6433 PDF预览

BFR360T-E6433

更新时间: 2024-11-16 14:41:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
6页 180K
描述
Transistor

BFR360T-E6433 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.61
Is Samacsys:N最大集电极电流 (IC):0.035 A
配置:Single最小直流电流增益 (hFE):60
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.21 W子类别:Other Transistors
表面贴装:YES标称过渡频率 (fT):10000 MHz
Base Number Matches:1

BFR360T-E6433 数据手册

 浏览型号BFR360T-E6433的Datasheet PDF文件第2页浏览型号BFR360T-E6433的Datasheet PDF文件第3页浏览型号BFR360T-E6433的Datasheet PDF文件第4页浏览型号BFR360T-E6433的Datasheet PDF文件第5页浏览型号BFR360T-E6433的Datasheet PDF文件第6页 
BFR360T  
NPN Silicon RF Transistor  
Preliminary data  
3
Low voltage/ low current operation  
For low noise amplifiers  
For Oscillators up to 3.5 GHz and Pout > 10 dBm  
Low noise figure: 1.0 dB at 1.8 GHz  
2
1
VPS05996  
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type  
BFR360T  
Marking  
FBs  
Pin Configuration  
2 = E 3 = C  
Package  
SC75  
1 = B  
Maximum Ratings  
Parameter  
Symbol  
Value  
6
15  
15  
2
35  
4
210  
Unit  
V
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
CEO  
CES  
CBO  
EBO  
mA  
mW  
°C  
I
C
Base current  
I
B
1)  
Total power dissipation  
81°C  
P
tot  
T
S
150  
-65 ... 150  
-65 ... 150  
Junction temperature  
Ambient temperature  
Storage temperature  
T
j
T
T
A
stg  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
325  
Unit  
K/W  
2)  
R
thJS  
1
2
T is measured on the collector lead at the soldering point to the pcb  
S
For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
Jun-16-2003  
1

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