Datasheet > BFR380

BFR380

更新时间： 2024-11-15 22:39:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
8页	145K
描述
NPN Silicon RF Transistor

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中文翻译

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数据手册

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BFR380 数据手册

BFR380F

NPN Silicon RF Transistor

Preliminary data

High current capability and low figure for

wide dynamic range application

Low voltage operation

Ideal for low phase noise oscillators up to 3.5 GHz

Low noise figure: 1.1 dB at 1.8 GHz

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

BFR380F

Marking

FCs

Pin Configuration

2 = E 3 = C

Package

TSFP-3

1 = B

Maximum Ratings

Parameter

Symbol

Value

380

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

°C

Base current

Total power dissipation

tot

95°C

150

-65 ... 150

Junction temperature

Ambient temperature

Storage temperature

stg

Thermal Resistance

Parameter

Symbol

Value

Unit

K/W

Junction - soldering point

145

thJS

T is measured on the collector lead at the soldering point to the pcb

For calculation of R

please refer to Application Note Thermal Resistance

thJA

Jan-24-2003

12 3 4 5 6 7 8

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