BFR380L3

更新时间： 2024-11-15 22:39:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
4页	106K
描述
NPN Silicon RF Transistor

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BFR380L3 数据手册

BFR380L3

NPN Silicon RF Transistor

Preliminary data

High current capability and low figure for

wide dynamic range application

Low voltage operation

Ideal for low phase noise oscillators up to 3.5 GHz

Low noise figure: 1.1 dB at 1.8 GHz

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

BFR380L3

Marking

Pin Configuration

2 = E 3 = C

Package

TSLP-3-1

1 = B

Maximum Ratings

Parameter

Symbol

Value

380

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

°C

Base current

Total power dissipation

tot

96°C

150

-65 ... 150

Junction temperature

Ambient temperature

Storage temperature

stg

Thermal Resistance

Parameter

Symbol

Value

Unit

K/W

Junction - soldering point

140

thJS

T is measured on the collector lead at the soldering point to the pcb

For calculation of R

please refer to Application Note Thermal Resistance

thJA

Jun-16-2003

12 3 4

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