Datasheet > BFR370F

BFR370F

更新时间： 2024-09-25 17:00:59

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	429K
描述
6V,0.05A,General Purpose NPN Bipolar Transistor

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BFR370F 数据手册

Microwave Low Noise Silicon Bipolar RF Transistor

BFR370F

Features



Low leakage current

Low capacitance characteristics

Large dynamic range

Mechanic al Data



Case: SOT-323

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-323

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

BFR370F

SOT-323

3000pcs / Tape & Reel

FDs

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (continuous)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Thermal Characteristics

Parameter

Power Dissipation

Symbol

P_D

Value

250

Unit

°C

Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

-65 ~ +150

T_STG

°C

STM0461A: September 2020

www.gmesemi.com

12 3 4 5

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