Datasheet > BFR360FH6765XTSA1

BFR360FH6765XTSA1

更新时间： 2024-11-17 03:20:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	547K
描述
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN, ROHS COMPLIANT, TSFP-3

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BFR360FH6765XTSA1 数据手册

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BFR360F

NPN Silicon RF Transistor

• Low noise amplifier for low current applications

• Collector design supports 5V supply voltage

• For oscillators up to 3.5 GHz

• Low noise figure 1.0 dB at 1.8 GHz

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFR360F

Marking

FBs

Pin Configuration

2 = E 3 = C

Package

TSFP-3

1 = B

Maximum Ratings at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

210

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

°C

Base current

Total power dissipation

tot

T ≤ 98°C

150

-55 ... 150

Junction temperature

Storage temperature

Stg

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

≤ 250

Unit

K/W

thJS

¹T is measured on the collector lead at the soldering point to the pcb

²For calculation of R

please refer to Application Note AN077 Thermal Resistance

thJA

2010-05-20

12 3 4 5 6 7...11

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