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BFR360L3-E6327 PDF预览

BFR360L3-E6327

更新时间: 2024-09-29 14:49:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 77K
描述
Transistor

BFR360L3-E6327 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.61
Is Samacsys:N最大集电极电流 (IC):0.035 A
配置:Single最小直流电流增益 (hFE):90
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.21 W子类别:Other Transistors
表面贴装:YES标称过渡频率 (fT):11000 MHz
Base Number Matches:1

BFR360L3-E6327 数据手册

 浏览型号BFR360L3-E6327的Datasheet PDF文件第2页浏览型号BFR360L3-E6327的Datasheet PDF文件第3页浏览型号BFR360L3-E6327的Datasheet PDF文件第4页浏览型号BFR360L3-E6327的Datasheet PDF文件第5页浏览型号BFR360L3-E6327的Datasheet PDF文件第6页浏览型号BFR360L3-E6327的Datasheet PDF文件第7页 
BFR360L3  
NPN Silicon RF Transistor*  
Low voltage/ Low current operation  
For low noise amplifiers  
3
1
For Oscillators up to 3.5 GHz and Pout > 10 dBm  
Low noise figure: 1.0 dB at 1.8 GHz  
2
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
* Short term description  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
Marking  
Pin Configuration  
Package  
BFR360L3  
FB  
TSLP-3-1  
1 = B  
2 = E  
3 = C  
Maximum Ratings  
Parameter  
Symbol  
Value  
6
Unit  
V
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
CEO  
CES  
CBO  
EBO  
15  
15  
2
35  
4
mA  
mW  
°C  
I
I
C
Base current  
B
2)  
210  
Total power dissipation  
P
tot  
T 104°C  
S
150  
Junction temperature  
Ambient temperature  
Storage temperature  
T
T
T
j
-65 ... 150  
-65 ... 150  
A
stg  
Thermal Resistance  
Parameter  
Symbol  
Value  
Unit  
3)  
K/W  
Junction - soldering point  
R
220  
thJS  
1Pb-containing package may be available upon special request  
2T is measured on the collector lead at the soldering point to the pcb  
S
3For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
2007-03-30  
1

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