Datasheet > BFR360L3

BFR360L3

更新时间： 2024-11-15 22:39:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
4页	105K
描述
NPN Silicon RF Transistor

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BFR360L3 数据手册

BFR360L3

NPN Silicon RF Transistor

Preliminary data

Low voltage/ Low current operation

For low noise amplifiers

For Oscillators up to 3.5 GHz and Pout > 10 dBm

Low noise figure: 1.0 dB at 1.8 GHz

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

BFR360L3

Marking

Pin Configuration

2 = E 3 = C

Package

TSLP-3-1

1 = B

Maximum Ratings

Parameter

Symbol

Value

210

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

°C

Base current

Total power dissipation

tot

106°C

150

-65 ... 150

Junction temperature

Ambient temperature

Storage temperature

stg

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

tbd

Unit

K/W

thJS

T is measured on the collector lead at the soldering point to the pcb

For calculation of R

please refer to Application Note Thermal Resistance

thJA

Jul-01-2003

12 3 4

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