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BF770AE6433 PDF预览

BF770AE6433

更新时间: 2024-11-24 20:03:23
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器光电二极管晶体管
页数 文件大小 规格书
3页 47K
描述
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN

BF770AE6433 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.36最大集电极电流 (IC):0.05 A
基于收集器的最大容量:0.9 pF集电极-发射极最大电压:12 V
配置:SINGLEJESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):6000 MHz
Base Number Matches:1

BF770AE6433 数据手册

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