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BDX53C PDF预览

BDX53C

更新时间: 2024-11-23 22:30:03
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意法半导体 - STMICROELECTRONICS 晶体晶体管功率双极晶体管达林顿晶体管开关局域网
页数 文件大小 规格书
6页 83K
描述
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

BDX53C 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:8 weeks
风险等级:0.93Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:179162
Samacsys Pin Count:3Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-220
Samacsys Released Date:2015-07-22 14:46:59Is Samacsys:N
最大集电极电流 (IC):8 A集电极-发射极最大电压:100 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):750
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:60 W
最大功率耗散 (Abs):60 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn) - annealed端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):20 MHzVCEsat-Max:2 V
Base Number Matches:1

BDX53C 数据手册

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BDX53B / BDX53C  
BDX54B / BDX54C  
COMPLEMENTARY SILICON POWER  
DARLINGTON TRANSISTORS  
STMicroelectronics PREFERRED  
SALESTYPES  
APPLICATIONS  
AUDIO AMPLIFIERS  
LINEARAND SWITCHING INDUSTRIAL  
EQUIPMENT  
3
2
DESCRIPTION  
1
The BDX53B and BDX53C are silicon  
Epitaxial-Base NPN power transistors in  
monolithic Darlington configuration mounted in  
Jedec TO-220 plastic package. They are intented  
for use in hammer drivers, audio amplifiers and  
other medium power linear and switching  
applications.  
TO-220  
The complementary PNP types are BDX54B and  
BDX54C respectively.  
INTERNAL SCHEMATIC DIAGRAM  
R1 Typ. = 10 KΩ  
R2 Typ. = 150 Ω  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
NPN  
PNP  
BDX53B  
BDX54B  
80  
BDX53C  
BDX54C  
100  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-base Voltage (IC = 0)  
Collector Current  
V
V
80  
100  
5
8
V
A
ICM  
IB  
Collector Peak Current (repetitive)  
12  
0.2  
60  
A
Base Current  
A
o
Ptot  
Tstg  
Tj  
W
oC  
oC  
Total Dissipation at Tc 25 C  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
For PNP types voltage and current values are negative.  
1/6  
September 1999  

BDX53C 替代型号

型号 品牌 替代类型 描述 数据表
TIP122 STMICROELECTRONICS

类似代替

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
TIP122FP STMICROELECTRONICS

类似代替

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
BDX53C FAIRCHILD

功能相似

Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications

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