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BDX53CBV PDF预览

BDX53CBV

更新时间: 2024-11-05 04:03:51
品牌 Logo 应用领域
安森美 - ONSEMI 局域网放大器晶体管
页数 文件大小 规格书
62页 380K
描述
8A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

BDX53CBV 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:PLASTIC, TO-220AB, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.74
外壳连接:COLLECTOR最大集电极电流 (IC):8 A
集电极-发射极最大电压:100 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):750JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

BDX53CBV 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
. . . designed for general–purpose amplifier and low–speed switching applications.  
High DC Current Gain —  
= 2500 (Typ) @ I = 4.0 Adc  
Collector Emitter Sustaining Voltage — @ 100 mAdc  
h
FE  
C
V
V
= 80 Vdc (Min) — BDX53B, 54B  
= 100 Vdc (Min) — BDX53C, 54C  
CEO(sus)  
CEO(sus)  
Low Collector–Emitter Saturation Voltage —  
V
V
= 2.0 Vdc (Max) @ I = 3.0 Adc  
CE(sat)  
CE(sat)  
C
DARLINGTON  
8 AMPERE  
COMPLEMENTARY  
SILICON  
= 4.0 Vdc (Max) @ I = 5.0 Adc  
C
Monolithic Construction with Built–In Base–Emitter Shunt Resistors  
TO–220AB Compact Package  
POWER TRANSISTORS  
80100 VOLTS  
65 WATTS  
MAXIMUM RATINGS  
BDX53B  
BDX54B  
BDX53C  
BDX54C  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
80  
80  
100  
100  
V
CB  
V
EB  
5.0  
Collector Current — Continuous  
Peak  
I
C
8.0  
12  
Base Current  
I
B
0.2  
Adc  
Total Device Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
60  
0.48  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
stg  
65 to +150  
C
J
CASE 221A–06  
TO–220AB  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
70  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
θJA  
70  
θJC  
T
A
T
C
4.0 80  
3.0 60  
T
C
2.0 40  
1.0 20  
0
T
A
0
20  
40  
60  
80  
100  
120  
140  
160  
T, TEMPERATURE (°C)  
Figure 1. Power Derating  
REV 7  
3–221  
Motorola Bipolar Power Transistor Device Data  

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