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BDX53CBD

更新时间： 2024-11-04 21:03:35
品牌 Logo 应用领域
安森美 - ONSEMI 局域网放大器晶体管
页数 文件大小 规格书
7页 143K
描述
TRANSISTOR 8 A, 100 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

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中文翻译

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BDX53CBD 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.75
外壳连接：COLLECTOR最大集电极电流 (IC)：8 A
集电极-发射极最大电压：100 V配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：750JESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：NO端子面层：TIN LEAD
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

BDX53CBD 数据手册

 浏览型号BDX53CBD的Datasheet PDF文件第2页浏览型号BDX53CBD的Datasheet PDF文件第3页浏览型号BDX53CBD的Datasheet PDF文件第4页浏览型号BDX53CBD的Datasheet PDF文件第5页浏览型号BDX53CBD的Datasheet PDF文件第6页浏览型号BDX53CBD的Datasheet PDF文件第7页 
BDX53B, BDX53C (NPN),  
BDX54B, BDX54C (PNP)  
Plastic Medium-Power  
Complementary Silicon  
Transistors  
http://onsemi.com  
These devices are designed for general−purpose amplifier and  
low−speed switching applications.  
DARLINGTON  
8 AMPERE  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
80−100 VOLTS, 65 WATTS  
Features  
• High DC Current Gain −  
h
FE  
= 2500 (Typ) @ I = 4.0 Adc  
C
• Collector Emitter Sustaining Voltage − @ 100 mAdc  
V
V
= 80 Vdc (Min) − BDX53B, 54B  
= 100 Vdc (Min) − BDX53C, 54C  
CEO(sus)  
CEO(sus)  
• Low Collector−Emitter Saturation Voltage −  
V
V
= 2.0 Vdc (Max) @ I = 3.0 Adc  
C
CE(sat)  
4
= 4.0 Vdc (Max) @ I = 5.0 Adc  
CE(sat)  
C
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors  
• Pb−Free Packages are Available*  
TO−220AB  
CASE 221A  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
STYLE 1  
1
2
Collector−Emitter Voltage  
V
CEO  
Vdc  
3
BDX53B, BDX54B  
BDX53C, BDX54C  
80  
100  
Collector−Base Voltage  
V
CB  
Vdc  
MARKING DIAGRAM  
& PIN ASSIGNMENT  
BDX53B, BDX54B  
BDX53C, BDX54C  
80  
100  
Emitter−Base Voltage  
V
5.0  
Vdc  
Adc  
EB  
4
Collector Current − Continuous  
− Peak  
I
8.0  
12  
C
Collector  
Base Current  
I
B
0.2  
Adc  
Total Device Dissipation @ T = 25°C  
P
D
65  
0.48  
W
W/°C  
C
Derate above 25°C  
BDX5xyG  
AY WW  
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
1
3
Characteristic  
Symbol  
Max  
70  
Unit  
°C/W  
°C/W  
Base  
Emitter  
2
Collector  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case  
R
q
JA  
R
1.92  
BDX5xy = Device Code  
x = 3 or 4  
q
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
y = B or C  
Assembly Location  
Year  
Work Week  
Pb−Free Package  
A
Y
WW  
G
=
=
=
=
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
October, 2011 − Rev. 14  
BDX53B/D  
1234567

中文翻译

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