Datasheet > BDX53CAJ

BDX53CAJ

更新时间： 2024-09-24 03:36:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
62页	380K
描述
TRANSISTOR 8 A, 100 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

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BDX53CAJ 数据手册

SEMICONDUCTOR TECHNICAL DATA

. . . designed for general–purpose amplifier and low–speed switching applications.

•

High DC Current Gain —

= 2500 (Typ) @ I = 4.0 Adc

Collector Emitter Sustaining Voltage — @ 100 mAdc

•

= 80 Vdc (Min) — BDX53B, 54B

= 100 Vdc (Min) — BDX53C, 54C

CEO(sus)

•

Low Collector–Emitter Saturation Voltage —

= 2.0 Vdc (Max) @ I = 3.0 Adc

CE(sat)

DARLINGTON

8 AMPERE

COMPLEMENTARY

SILICON

= 4.0 Vdc (Max) @ I = 5.0 Adc

•

Monolithic Construction with Built–In Base–Emitter Shunt Resistors

TO–220AB Compact Package

POWER TRANSISTORS

80–100 VOLTS

65 WATTS

MAXIMUM RATINGS

BDX53B

BDX54B

BDX53C

BDX54C

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

CEO

100

5.0

Collector Current — Continuous

Peak

8.0

Base Current

0.2

Adc

Total Device Dissipation @ T = 25 C

Derate above 25 C

0.48

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

stg

–65 to +150

CASE 221A–06

TO–220AB

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

θJA

θJC

4.0 80

3.0 60

2.0 40

1.0 20

100

120

140

160

T, TEMPERATURE (°C)

Figure 1. Power Derating

REV 7

3–221

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...62

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