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BDX53BDW PDF预览

BDX53BDW

更新时间： 2024-11-16 13:05:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
7页 101K
描述
8A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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中文翻译

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BDX53BDW 技术参数

是否Rohs认证：不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.75
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：8 A集电极-发射极最大电压：80 V
配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE)：750
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：4 MHzBase Number Matches：1

BDX53BDW 数据手册

 浏览型号BDX53BDW的Datasheet PDF文件第2页浏览型号BDX53BDW的Datasheet PDF文件第3页浏览型号BDX53BDW的Datasheet PDF文件第4页浏览型号BDX53BDW的Datasheet PDF文件第5页浏览型号BDX53BDW的Datasheet PDF文件第6页浏览型号BDX53BDW的Datasheet PDF文件第7页 
Operating and Storage Junction  
Temperature Range  
T , T  
J
                                                                                                                      
65 to  
                                                                                                                                 
150  
°C  
BDX53B, BDX53C (NPN),  
BDX54B, BDX54C (PNP)  
Plastic Medium-Power  
Complementary Silicon  
Transistors  
http://onsemi.com  
These devices are designed for general-purpose amplifier and  
low-speed switching applications.  
DARLINGTON  
8 AMPERE  
Features  
•ꢀHigh DC Current Gain -  
FE  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
80ꢀ-ꢀ100 VOLTS, 65 WATTS  
h
= 2500 (Typ) @ I = 4.0 Adc  
C
•ꢀCollector Emitter Sustaining Voltage - @ 100 mAdc  
V
V
= 80 Vdc (Min) - BDX53B, 54B  
= 100 Vdc (Min) - BDX53C, 54C  
CEO(sus)  
CEO(sus)  
•ꢀLow Collector-Emitter Saturation Voltage -  
V
V
= 2.0 Vdc (Max) @ I = 3.0 Adc  
C
= 4.0 Vdc (Max) @ I = 5.0 Adc  
CE(sat)  
4
CE(sat)  
C
•ꢀMonolithic Construction with Built-In Base-Emitter Shunt Resistors  
•ꢀPb-Free Packages are Available*  
TO-220AB  
CASE 221A  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
1
2
Collector-Emitter Voltage  
V
CEO  
Vdc  
3
BDX53B, BDX54B  
BDX53C, BDX54C  
80  
100  
Collector-Base Voltage  
V
CB  
Vdc  
MARKING DIAGRAM  
& PIN ASSIGNMENT  
BDX53B, BDX54B  
BDX53C, BDX54C  
80  
100  
Emitter-Base Voltage  
V
5.0  
Vdc  
Adc  
EB  
4
Collector  
Collector Current - Continuous  
- Peak  
I
8.0  
12  
C
Base Current  
I
B
0.2  
Adc  
Total Device Dissipation @ T = 25°C  
P
D
65  
0.48  
W
W/°C  
C
Derate above 25°C  
BDX5xyG  
AY WW  
stg  
THERMAL CHARACTERISTICS  
1
Base  
3
Emitter  
Characteristic  
Symbol  
Max  
70  
Unit  
°C/W  
°C/W  
2
Collector  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
R
q
JA  
R
q
JC  
1.92  
BDX5xy = Device Code  
x = 3 or 4  
y = B or C  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
A
=
=
=
=
Assembly Location  
Year  
Work Week  
Y
WW  
G
Pb-Free Package  
*For additional information on our Pb-Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
November, 2007 - Rev. 13  
1
Publication Order Number:  
BDX53B/D  
1234567

中文翻译

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