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BDX53BFI PDF预览

BDX53BFI

更新时间: 2024-01-27 03:53:54
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关局域网
页数 文件大小 规格书
3页 124K
描述
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 8A I(C) | TO-220AB

BDX53BFI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.68最大集电极电流 (IC):8 A
集电极-发射极最大电压:45 V配置:DARLINGTON WITH BUILT-IN DIODE
最小直流电流增益 (hFE):750JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:NPN
最大功率耗散 (Abs):60 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):20 MHzBase Number Matches:1

BDX53BFI 数据手册

 浏览型号BDX53BFI的Datasheet PDF文件第2页浏览型号BDX53BFI的Datasheet PDF文件第3页 

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