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BDW94B PDF预览

BDW94B

更新时间: 2024-11-22 22:39:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率双极晶体管达林顿晶体管局域网
页数 文件大小 规格书
6页 82K
描述
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

BDW94B 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:PLASTIC, TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.37
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:1186949Samacsys Pin Count:3
Samacsys Part Category:Transistor Darlington PairSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:TO-220 P011CSamacsys Released Date:2019-07-02 10:57:43
Is Samacsys:N最大集电极电流 (IC):12 A
集电极-发射极最大电压:80 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):100JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):245极性/信道类型:PNP
功耗环境最大值:80 W最大功率耗散 (Abs):80 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):20 MHz
VCEsat-Max:3 VBase Number Matches:1

BDW94B 数据手册

 浏览型号BDW94B的Datasheet PDF文件第2页浏览型号BDW94B的Datasheet PDF文件第3页浏览型号BDW94B的Datasheet PDF文件第4页浏览型号BDW94B的Datasheet PDF文件第5页浏览型号BDW94B的Datasheet PDF文件第6页 
BDW93C  
BDW94B/BDW94C  
COMPLEMENTARY SILICON POWER  
DARLINGTON TRANSISTORS  
STMicroelectronics PREFERRED  
SALESTYPES  
COMPLEMENTARY PNP - NPN DEVICES  
INTEGRATED ANTIPARALLEL  
COLLECTOR-EMITTER DIODE  
APPLICATIONS  
LINEARAND SWITCHING INDUSTRIAL  
EQUIPMENT  
3
2
1
DESCRIPTION  
The BDW93C is a silicon Epitaxial-Base NPN  
power transistor in monolithic Darlington  
configuration mounted in Jedec TO-220 plastic  
package. It is intented for use in power linear and  
switching applications.  
TO-220  
The complementary PNP type is BDW94C.  
Also BDW94B is a PNP type.  
INTERNAL SCHEMATIC DIAGRAM  
R1 Typ. = 10 KΩ  
R2 Typ. = 150 Ω  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
NPN  
PNP  
BDW93C  
BDW94C  
100  
BDW94B  
VCBO  
VCEO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Collector Current  
80  
80  
V
V
100  
12  
15  
A
ICM  
IB  
Collector Peak Current  
A
Base Current  
0.2  
A
o
Ptot  
Tstg  
Tj  
80  
W
oC  
oC  
Total Dissipation at Tc 25 C  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
For PNP types voltage and current values are negative.  
1/6  
October 1999  

BDW94B 替代型号

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